| PART |
Description |
Maker |
| IXXH30N60C3D1 |
XPTTM 600V IGBT
|
IXYS Corporation
|
| IXXK200N60C3 |
XPTTM 600V IGBTs
|
IXYS Corporation
|
| IXYH40N120B3 |
1200V XPTTM IGBT
|
IXYS Corporation
|
| IXYA8N90C3D1 |
900V XPTTM IGBT
|
IXYS Corporation
|
| IXYH40N120B3D1 |
1200V XPTTM IGBT GenX3TM w/ Diode
|
IXYS Corporation
|
| HGT1Y40N60B3D |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 40A I(C) | TO-264
70A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
|
FAIRCHILD[Fairchild Semiconductor]
|
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| SGP20N60HS SGW20N60HS |
High Speed IGBT in NPT-technology 在不扩散核武器条约高高速IGBT的技
IGBTs & DuoPacks - 20A 600V TO220 IGBT
IGBTs & DuoPacks - 20A 600V TO247 IGBT
|
Infineon Technologies AG
http://
Infineon Technologies A...
|
| HGTG30N60B3D |
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(60A, 600V, UFS系列 带超快二极管N沟道绝缘栅双极型晶体 60 A, 600 V, N-CHANNEL IGBT, TO-247
|
Intersil, Corp.
|
| IRGSL4B60K IRGB4B60K IRGS4B60K |
600V Low VCEon Copack IGBT in a TO-262 package
600V Low VCEon Copack IGBT in a D2Pak package
600V Low VCEon Copack IGBT in a TO-220 package
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
